An Efficient Analytical Model for Calculating Trapped Charge in Amorphous Silicon

Yao Tsung Tsai, Kuo Don Hong, Yin Lun Yuan

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. In this efficient model, the trapped-charge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors.

原文???core.languages.en_GB???
頁(從 - 到)725-728
頁數4
期刊IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
13
發行號6
DOIs
出版狀態已出版 - 6月 1994

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