@article{cc02cb2068bf40f78ef49f8d6ffef52b,
title = "An 8692 GHz frequency shift keying transmitter with an integrated antenna in 0.5 E/D-PHEMT technology",
abstract = "An 8692 GHz frequency shift keying (FSK) transmitter with an integrated antenna in 0.5 μm enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) technology is presented in this letter for broadband millimeter-wave applications. The transmitter consists of a push-push voltage controlled oscillator (VCO) and a slot antenna. The chip size of the transmitter is 2× 1 mm2. The transmitter demonstrates a RF output power of higher than 8 dBm over the operation frequency and an antenna gain of 3 dBi with broadside radiation pattern. The transmitter is also successfully evaluated with high speed FSK digital modulations. The dc power consumption of the transmitter is within 54 mW with a dc supply voltage of 2 V.",
keywords = "Antenna, Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT), Frequency shift keying (FSK), Millimeter-wave (MMW), W-band.",
author = "Chang, {Hong Yeh} and Hung, {Ruei Yun} and Yeh, {Yan Liang} and Kevin Chen and Wu, {Szu Hsien} and Wang, {Yu Chi}",
note = "Funding Information: Manuscript received March 23, 2009; revised August 03, 2009. First published October 20, 2009; current version published November 06, 2009. This work was supported in part by the National Science Council of Taiwan under Grant NSC 96-2221-E-008-117-MY3, Grant NSC 96-2628-E-008-073-MY3, and by WIN Semiconductors Corporation, and the Chip Implementation Center (CIC), Taiwan.",
year = "2009",
month = nov,
doi = "10.1109/LMWC.2009.2032026",
language = "???core.languages.en_GB???",
volume = "19",
pages = "749--751",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
number = "11",
}