An 8.1-W, 50.9% efficient continuous Class-F mode power amplifier developed using 0.25-µm GaN/SiC technology for 5G NR n79 band

Hsin Chieh Lin, Kuan Chou Chen, Hwann Kaeo Chiou

研究成果: 雜誌貢獻期刊論文同行評審

摘要

This letter presents an integrated 5G NR n79–band power amplifier with high power and efficiency that was fabricated using WIN Semiconductors’ 0.25-µm GaN/SiC technology. The stability and linearity issues of the PA is thoroughly considered. High efficiency and broadband operation were achieved using a continuous Class-F mode output matching network. This two-stage PA had a power gain, 3-dB power bandwidth, saturation power, and peak power-added efficiency of 20.4 dB, 3.6–5.4 GHz, 39.1 dBm, and 50.9%, respectively. Its average output power was 33.3 dBm under an error vector magnitude requirement of 3.5% for a 5G NR FR1 256-QAM 100-MHz-bandwidth modulated signal with a frequency of 3.7–5.0 GHz.

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頁(從 - 到)1-6
頁數6
期刊IEICE Electronics Express
20
發行號8
DOIs
出版狀態已出版 - 25 4月 2023

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