每年專案
摘要
This letter presents an integrated 5G NR n79–band power amplifier with high power and efficiency that was fabricated using WIN Semiconductors’ 0.25-µm GaN/SiC technology. The stability and linearity issues of the PA is thoroughly considered. High efficiency and broadband operation were achieved using a continuous Class-F mode output matching network. This two-stage PA had a power gain, 3-dB power bandwidth, saturation power, and peak power-added efficiency of 20.4 dB, 3.6–5.4 GHz, 39.1 dBm, and 50.9%, respectively. Its average output power was 33.3 dBm under an error vector magnitude requirement of 3.5% for a 5G NR FR1 256-QAM 100-MHz-bandwidth modulated signal with a frequency of 3.7–5.0 GHz.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1-6 |
頁數 | 6 |
期刊 | IEICE Electronics Express |
卷 | 20 |
發行號 | 8 |
DOIs | |
出版狀態 | 已出版 - 25 4月 2023 |
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