Ammonium hydroxide effect on low-temperature wafer bonding energy enhancement

Y. L. Chao; Q. Y. Tong; T. H. Lee; M. Reiche; R. Scholz; J. C.S. Woo; U. Gösele

doi:10.1149/1.1857671

Ammonium hydroxide effect on low-temperature wafer bonding energy enhancement

Y. L. Chao, Q. Y. Tong, T. H. Lee, M. Reiche, R. Scholz, J. C.S. Woo, U. Gösele

機械工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

41 引文斯高帕斯（Scopus）

摘要

A wafer prebonding treatment by ammonium hydroxide (NH₄OH) leading to a high bonding strength at low temperatures is presented in three material systems. After 200°C annealing, a surface energy of about 700 mJ/m² for thermal silicon-oxide bonding and of 1300 mJ/m² for plasma-enhanced chemical vapor deposition oxide bonding is realized. It is suggested that the lower ability of ammonia, the by-product of a polymerization reaction, to break the siloxane (Si-O-Si) bridging bonds appears to be responsible for the increase in surface energy in both silicon oxide bonding cases. NH₄OH treatment is also effective on bare germanium/silicon- oxide bonding with a surface energy of 800 mJ/m². A highly hydrophilic germanium surface obtained by this treatment accounts for the high bonding energy.

原文	???core.languages.en_GB???
頁（從 - 到）	G74-G77
期刊	Electrochemical and Solid-State Letters
卷	8
發行號	3
DOIs	https://doi.org/10.1149/1.1857671
出版狀態	已出版 - 2005

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10.1149/1.1857671

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abstract = "A wafer prebonding treatment by ammonium hydroxide (NH4OH) leading to a high bonding strength at low temperatures is presented in three material systems. After 200°C annealing, a surface energy of about 700 mJ/m2 for thermal silicon-oxide bonding and of 1300 mJ/m2 for plasma-enhanced chemical vapor deposition oxide bonding is realized. It is suggested that the lower ability of ammonia, the by-product of a polymerization reaction, to break the siloxane (Si-O-Si) bridging bonds appears to be responsible for the increase in surface energy in both silicon oxide bonding cases. NH4OH treatment is also effective on bare germanium/silicon- oxide bonding with a surface energy of 800 mJ/m2. A highly hydrophilic germanium surface obtained by this treatment accounts for the high bonding energy.",

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AU - Chao, Y. L.

AU - Tong, Q. Y.

AU - Lee, T. H.

AU - Reiche, M.

AU - Scholz, R.

AU - Woo, J. C.S.

AU - Gösele, U.

PY - 2005

Y1 - 2005

N2 - A wafer prebonding treatment by ammonium hydroxide (NH4OH) leading to a high bonding strength at low temperatures is presented in three material systems. After 200°C annealing, a surface energy of about 700 mJ/m2 for thermal silicon-oxide bonding and of 1300 mJ/m2 for plasma-enhanced chemical vapor deposition oxide bonding is realized. It is suggested that the lower ability of ammonia, the by-product of a polymerization reaction, to break the siloxane (Si-O-Si) bridging bonds appears to be responsible for the increase in surface energy in both silicon oxide bonding cases. NH4OH treatment is also effective on bare germanium/silicon- oxide bonding with a surface energy of 800 mJ/m2. A highly hydrophilic germanium surface obtained by this treatment accounts for the high bonding energy.

AB - A wafer prebonding treatment by ammonium hydroxide (NH4OH) leading to a high bonding strength at low temperatures is presented in three material systems. After 200°C annealing, a surface energy of about 700 mJ/m2 for thermal silicon-oxide bonding and of 1300 mJ/m2 for plasma-enhanced chemical vapor deposition oxide bonding is realized. It is suggested that the lower ability of ammonia, the by-product of a polymerization reaction, to break the siloxane (Si-O-Si) bridging bonds appears to be responsible for the increase in surface energy in both silicon oxide bonding cases. NH4OH treatment is also effective on bare germanium/silicon- oxide bonding with a surface energy of 800 mJ/m2. A highly hydrophilic germanium surface obtained by this treatment accounts for the high bonding energy.

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M3 - 期刊論文

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JO - Electrochemical and Solid-State Letters

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Ammonium hydroxide effect on low-temperature wafer bonding energy enhancement

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