Ammonia impurities critical to the performance of nitride semiconductor devices

R. Torres, J. Vininski, C. Wyse, J. I. Chyi, G. T. Chen

研究成果: 書貢獻/報告類型會議論文篇章同行評審

3 引文 斯高帕斯(Scopus)

摘要

AlGaN/GaN HEMT devices were grown under specific experimental conditions designed to elucidate the effects of purification of the ammonia gas. Two different, commercially available, purifiers were tested under identical growth conditions along with three different grades of ammonia. After growth of the AlGaN/GaN layers, the wafers were subjected to Hall measurements where the sheet concentration, and mobility, were determined. The results clearly showed significantly enhanced performance for the inorganic based purifier compared to the resin based organometallic purifier for all experimental parameters tested. Additionally, the nitride devices were subjected to SIMS analysis with depth profiling in an attempt to identify the elemental nature of the impurities that caused the discrepancy in performance results between the various samples. Results from the Hall measurements and the SIMS analysis are presented and correlated to the conditions controlled during the growth of the nitride devices. copyright The Electrochemical Society.

原文???core.languages.en_GB???
主出版物標題State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7
發行者Electrochemical Society Inc.
頁面237-251
頁數15
版本5
ISBN(電子)1566775051
DOIs
出版狀態已出版 - 2006
事件State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico
持續時間: 29 10月 20063 11月 2006

出版系列

名字ECS Transactions
號碼5
3
ISSN(列印)1938-5862
ISSN(電子)1938-6737

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???event.eventtypes.event.conference???State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting
國家/地區Mexico
城市Cancun
期間29/10/063/11/06

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