摘要
Single-crystalline AlN thin films were epitaxially deposited on GaN/sapphire at a low temperature of 300°C using a helicon sputtering system. The crystallinity of the AlN films and the in-plane axes relation between the films and substrates were characterized by X-ray rocking curve and phi-scan measurements. The two-dimensional electron gases induced at the AlN/GaN heterojunction were investigated and a sheet carrier concentration up to 1.24 × 10 13 cm -2 was observed by Hall effect measurement. The results justify the attraction of this low temperature grown AlN/GaN heterostructure for use in high-power, high-speed and high-temperature electronics.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 3349-3353 |
頁數 | 5 |
期刊 | Physica Status Solidi (A) Applications and Materials Science |
卷 | 204 |
發行號 | 10 |
DOIs | |
出版狀態 | 已出版 - 10月 2007 |