AlInGaN/GaN HEMTs with High Johnson's Figure-of-Merit on Low Resistivity Silicon Substrate

Keyphrases

• GaN HEMT 100%
• AlInGaN 100%
• GaN Buffer 100%
• Johnson's Figure of Merit (J-FOM) 100%
• Low-resistivity Silicon Substrates 100%
• Power Output 66%
• Silicon Substrate 66%
• Gate Length 66%
• Power Gain 66%
• P-type 33%
• High Performance 33%
• Cut-off Frequency 33%
• Power Added Efficiency 33%
• Equivalent Circuit Model 33%
• Si Substrate 33%
• Low Power 33%
• Low Resistivity 33%
• Resistivity 33%
• Signal Output 33%
• Large Signal 33%
• GaN-on-Si 33%
• Three-terminal 33%
• Current Gain Cutoff Frequency 33%
• SiC Substrate 33%
• Channel Conduction 33%
• Parasitic Channel 33%
• Free Charge Carriers 33%
• High-resistivity Silicon Substrate 33%
• Capacitive Coupling 33%
• Off-state Breakdown Voltage 33%
• Power Simulation 33%

Engineering

• Silicon Substrate 100%
• Figure of Merit 100%
• Output Power 66%
• Cutoff Frequency 66%
• Gate Length 66%
• Power Gain 66%
• Current Gain 33%
• Power Added Efficiency 33%
• Conductive 33%
• Equivalent Circuit Model 33%
• Si Substrate 33%
• Signal Output 33%
• Breakdown Voltage 33%
• Max 33%
• Coupling Effect 33%
• Capacitive Coupling 33%
• Charge Carrier 33%

Material Science

• Silicon 100%
• Electrical Resistivity 100%
• Aluminum Nitride 25%
• Transistor 25%
• Electronic Circuit 25%
• Electron Mobility 25%
• Charge Carrier 25%