AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate

Hui Yu Chen; Po Tsung Tu; Po Chun Yeh; Pei Jer Tzeng; Shyh Shyuan Sheu; Chih I. Wu; Indraneel Sanyal; Jen Inn Chyi

doi:10.1109/VLSI-TSA54299.2022.9771040

AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate

Hui Yu Chen, Po Tsung Tu, Po Chun Yeh, Pei Jer Tzeng, Shyh Shyuan Sheu, Chih I. Wu, Indraneel Sanyal, Jen Inn Chyi

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

We report the fabrication and characterization of 136-nm-gate AlInGaN/GaN high-electron mobility transistors with different thickness GaN cap layer. Using Matlab to simulate the energy band diagram under different cap layer thicknesses, the results show that the thicker cap layer will reduce the two-dimensional electron gas concentration due to the uplift of the conductive band and increase the carrier mobility. The HEMTs with 5 nm cap layer exhibit Ids,sat = 1.10 A/mm, gm = 405 mS/mm, and on/off ratio = 4.4×107. In small-signal operation, cut-off frequency FT/FMAX = 106.7/114.7 GHz are achieved, which gives a high value of (FT*Lg) = 14.5 GHz*µm among the reported GaN-on-Si devices.

原文	???core.languages.en_GB???
主出版物標題	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771040
出版狀態	已出版 - 2022
事件	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan 持續時間: 18 4月 2022 → 21 4月 2022

出版系列

名字	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區	Taiwan
城市	Hsinchu
期間	18/04/22 → 21/04/22

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10.1109/VLSI-TSA54299.2022.9771040

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Chen, H. Y., Tu, P. T., Yeh, P. C., Tzeng, P. J., Sheu, S. S., Wu, C. I., Sanyal, I., & Chyi, J. I. (2022). AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771040

Chen, Hui Yu ; Tu, Po Tsung ; Yeh, Po Chun 等. / AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

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title = "AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate",

abstract = "We report the fabrication and characterization of 136-nm-gate AlInGaN/GaN high-electron mobility transistors with different thickness GaN cap layer. Using Matlab to simulate the energy band diagram under different cap layer thicknesses, the results show that the thicker cap layer will reduce the two-dimensional electron gas concentration due to the uplift of the conductive band and increase the carrier mobility. The HEMTs with 5 nm cap layer exhibit Ids,sat = 1.10 A/mm, gm = 405 mS/mm, and on/off ratio = 4.4×107. In small-signal operation, cut-off frequency FT/FMAX = 106.7/114.7 GHz are achieved, which gives a high value of (FT*Lg) = 14.5 GHz*µm among the reported GaN-on-Si devices. ",

author = "Chen, {Hui Yu} and Tu, {Po Tsung} and Yeh, {Po Chun} and Tzeng, {Pei Jer} and Sheu, {Shyh Shyuan} and Wu, {Chih I.} and Indraneel Sanyal and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771040",

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series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

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Chen, HY, Tu, PT, Yeh, PC, Tzeng, PJ, Sheu, SS, Wu, CI, Sanyal, I & Chyi, JI 2022, AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771040

AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate. / Chen, Hui Yu; Tu, Po Tsung; Yeh, Po Chun 等.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate

AU - Chen, Hui Yu

AU - Tu, Po Tsung

AU - Yeh, Po Chun

AU - Tzeng, Pei Jer

AU - Sheu, Shyh Shyuan

AU - Wu, Chih I.

AU - Sanyal, Indraneel

AU - Chyi, Jen Inn

PY - 2022

Y1 - 2022

N2 - We report the fabrication and characterization of 136-nm-gate AlInGaN/GaN high-electron mobility transistors with different thickness GaN cap layer. Using Matlab to simulate the energy band diagram under different cap layer thicknesses, the results show that the thicker cap layer will reduce the two-dimensional electron gas concentration due to the uplift of the conductive band and increase the carrier mobility. The HEMTs with 5 nm cap layer exhibit Ids,sat = 1.10 A/mm, gm = 405 mS/mm, and on/off ratio = 4.4×107. In small-signal operation, cut-off frequency FT/FMAX = 106.7/114.7 GHz are achieved, which gives a high value of (FT*Lg) = 14.5 GHz*µm among the reported GaN-on-Si devices.

AB - We report the fabrication and characterization of 136-nm-gate AlInGaN/GaN high-electron mobility transistors with different thickness GaN cap layer. Using Matlab to simulate the energy band diagram under different cap layer thicknesses, the results show that the thicker cap layer will reduce the two-dimensional electron gas concentration due to the uplift of the conductive band and increase the carrier mobility. The HEMTs with 5 nm cap layer exhibit Ids,sat = 1.10 A/mm, gm = 405 mS/mm, and on/off ratio = 4.4×107. In small-signal operation, cut-off frequency FT/FMAX = 106.7/114.7 GHz are achieved, which gives a high value of (FT*Lg) = 14.5 GHz*µm among the reported GaN-on-Si devices.

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U2 - 10.1109/VLSI-TSA54299.2022.9771040

DO - 10.1109/VLSI-TSA54299.2022.9771040

M3 - 會議論文篇章

AN - SCOPUS:85130481955

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -

Chen HY, Tu PT, Yeh PC, Tzeng PJ, Sheu SS, Wu CI 等. AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771040

AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate

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