AlGaN/InGaN heterostructure field effect transistors grown on sapphire by metal-organic chemical vapor deposition

Engineering & Materials Science

• Organic chemicals 100%
• Sapphire 86%
• Transconductance 77%
• Chemical vapor deposition 75%
• High electron mobility transistors 74%
• Current density 62%
• Metallorganic chemical vapor deposition 51%
• Metals 41%
• Cutoff frequency 37%
• Threshold voltage 35%
• Transmission electron microscopy 33%
• Scattering 30%
• Transistors 27%
• Temperature 25%

Physics & Astronomy

• transconductance 71%
• metalorganic chemical vapor deposition 61%
• sapphire 55%
• field effect transistors 50%
• current density 46%
• saturation 45%
• threshold voltage 30%
• cut-off 27%
• leakage 26%
• transistors 25%
• transmission electron microscopy 21%
• oscillations 20%
• room temperature 18%
• scattering 16%
• temperature 9%

Chemical Compounds

• Transconductance 99%
• Field Effect 64%
• Current Gain 57%
• Current Density 47%
• Fluorescence Maxima 42%
• Chemical Vapour Deposition 29%
• Voltage 23%
• Strain 22%
• Transmission Electron Microscopy 21%
• Resistance 20%
• Ambient Reaction Temperature 18%
• Reduction 14%