@inproceedings{83714552d2154c83a832e843b3dd8bb2,
title = "AlGaN/GaN high electron mobility transistors with a p-Type GaN cap layer",
abstract = "In this work, AlGaN/GaN HEMTs with different types of p-GaN cap layers were fabricated and investigated. The p-GaN cap layer used in this study was for passivation study instead of forming enhancement-mode operation. The differences in p-GaN cap layers were Mg-doping concentration (1x10{"} and 3xl01 9 cm{"}1) and thickness (5 and 8 nm). Device with p-GaN cap of 8-nm and Mg-doping of 3x10{"} cm'3 showed the lowest gate leakage current, highest on/off current ratio (1.02xl06), highest breakdown voltage and least current collapse characteristics.",
author = "Tsai, {H. C.} and {Fan Chiang}, {S. C.} and Zhong, {Y. N.} and Hsin, {Y. M.}",
year = "2018",
doi = "10.1149/08507.0053ecst",
language = "???core.languages.en_GB???",
isbn = "9781607688358",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "53--57",
editor = "J. Hite and V. Chakrapani and J. Zavada and Anderson, {T. J.} and S. Kilgore",
booktitle = "ECS Transactions",
edition = "7",
note = "Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting ; Conference date: 13-05-2018 Through 17-05-2018",
}