AlGaN/GaN HEMTs with 2DHG Back Gate Control

Wei Tse Lin, Wen Chia Liao, Yi Nan Zhong, Yue Ming Hsin

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

原文???core.languages.en_GB???
頁(從 - 到)137-141
頁數5
期刊MRS Advances
3
發行號3
DOIs
出版狀態已出版 - 2018

指紋

深入研究「AlGaN/GaN HEMTs with 2DHG Back Gate Control」主題。共同形成了獨特的指紋。

引用此