AlGaN/GaN HEMTs with 2DHG Back Gate Control

Wei Tse Lin; Wen Chia Liao; Yi Nan Zhong; Yue Ming Hsin

doi:10.1557/adv.2017.619

AlGaN/GaN HEMTs with 2DHG Back Gate Control

Wei Tse Lin, Wen Chia Liao, Yi Nan Zhong, Yue Ming Hsin

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

原文	???core.languages.en_GB???
頁（從 - 到）	137-141
頁數	5
期刊	MRS Advances
卷	3
發行號	3
DOIs	https://doi.org/10.1557/adv.2017.619
出版狀態	已出版 - 2018

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10.1557/adv.2017.619

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title = "AlGaN/GaN HEMTs with 2DHG Back Gate Control",

abstract = "In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.",

keywords = "electronic structure, III-V, piezoelectric",

author = "Lin, {Wei Tse} and Liao, {Wen Chia} and Zhong, {Yi Nan} and Hsin, {Yue Ming}",

note = "Publisher Copyright: Copyright {\textcopyright} Materials Research Society 2017.",

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doi = "10.1557/adv.2017.619",

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T1 - AlGaN/GaN HEMTs with 2DHG Back Gate Control

AU - Lin, Wei Tse

AU - Liao, Wen Chia

AU - Zhong, Yi Nan

AU - Hsin, Yue Ming

PY - 2018

Y1 - 2018

N2 - In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

AB - In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

KW - electronic structure

KW - III-V

KW - piezoelectric

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U2 - 10.1557/adv.2017.619

DO - 10.1557/adv.2017.619

M3 - 期刊論文

AN - SCOPUS:85044156529

SN - 2059-8521

VL - 3

SP - 137

EP - 141

JO - MRS Advances

JF - MRS Advances

IS - 3

ER -

AlGaN/GaN HEMTs with 2DHG Back Gate Control

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