AgAu diffusion wafer bonding for thin-GaN LED fabrication

C. L. Chang, Y. C. Chuang, C. Y. Liu

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

In this study we successfully demonstrate a method for AgAu diffusion wafer bonding. We were able to achieve a high-melting-point bonding interface at a relatively low bonding temperature of 150°C. The AgAu interdiffusion coefficient is defined against the Au content. Au atoms have a faster diffusion rate in the Ag matrix layer, which causes the AgAu interface to move toward the Au side over time. The use of this method of AgAu diffusion bonding makes the fabrication of high-power thin- GaN light-emitting diode chips on Si wafers a feasible possibility.

原文???core.languages.en_GB???
頁(從 - 到)344-346
頁數3
期刊Electrochemical and Solid-State Letters
10
發行號11
DOIs
出版狀態已出版 - 2007

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