Ag electromigration against electron flow in Sn5Ag/Cu solder bump

H. W. Tseng; Y. T. Yeh; K. Y. Lin; C. Y. Liu

doi:10.1149/1.3236787

Ag electromigration against electron flow in Sn5Ag/Cu solder bump

H. W. Tseng, Y. T. Yeh, K. Y. Lin, C. Y. Liu

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A phenomenon that can result in electromigration suppression in solder bumps on Cu pads is reported. Under certain current stressing conditions, Ag migrates against the electron flow and forms a Ag₃ Sn compound layer at the cathode Sn5Ag/Cu interface. This phenomenon implies that it is the electrostatic force rather than the typical wind force that is the dominant electromigration force acting on the Ag solute atoms in the Sn matrix. The Ag₃ Sn compound layer formed at the Sn5Ag/Cu joint interface could effectively retard electromigration-induced consumption on the Cu bump pad.

原文	???core.languages.en_GB???
頁（從 - 到）	H445-H448
期刊	Electrochemical and Solid-State Letters
卷	12
發行號	12
DOIs	https://doi.org/10.1149/1.3236787
出版狀態	已出版 - 2009

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10.1149/1.3236787

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@article{0642023a9f5d41088df2f337d517eeeb,

title = "Ag electromigration against electron flow in Sn5Ag/Cu solder bump",

abstract = "A phenomenon that can result in electromigration suppression in solder bumps on Cu pads is reported. Under certain current stressing conditions, Ag migrates against the electron flow and forms a Ag3 Sn compound layer at the cathode Sn5Ag/Cu interface. This phenomenon implies that it is the electrostatic force rather than the typical wind force that is the dominant electromigration force acting on the Ag solute atoms in the Sn matrix. The Ag3 Sn compound layer formed at the Sn5Ag/Cu joint interface could effectively retard electromigration-induced consumption on the Cu bump pad.",

author = "Tseng, {H. W.} and Yeh, {Y. T.} and Lin, {K. Y.} and Liu, {C. Y.}",

year = "2009",

doi = "10.1149/1.3236787",

language = "???core.languages.en_GB???",

volume = "12",

pages = "H445--H448",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "12",

}

TY - JOUR

T1 - Ag electromigration against electron flow in Sn5Ag/Cu solder bump

AU - Tseng, H. W.

AU - Yeh, Y. T.

AU - Lin, K. Y.

AU - Liu, C. Y.

PY - 2009

Y1 - 2009

N2 - A phenomenon that can result in electromigration suppression in solder bumps on Cu pads is reported. Under certain current stressing conditions, Ag migrates against the electron flow and forms a Ag3 Sn compound layer at the cathode Sn5Ag/Cu interface. This phenomenon implies that it is the electrostatic force rather than the typical wind force that is the dominant electromigration force acting on the Ag solute atoms in the Sn matrix. The Ag3 Sn compound layer formed at the Sn5Ag/Cu joint interface could effectively retard electromigration-induced consumption on the Cu bump pad.

AB - A phenomenon that can result in electromigration suppression in solder bumps on Cu pads is reported. Under certain current stressing conditions, Ag migrates against the electron flow and forms a Ag3 Sn compound layer at the cathode Sn5Ag/Cu interface. This phenomenon implies that it is the electrostatic force rather than the typical wind force that is the dominant electromigration force acting on the Ag solute atoms in the Sn matrix. The Ag3 Sn compound layer formed at the Sn5Ag/Cu joint interface could effectively retard electromigration-induced consumption on the Cu bump pad.

UR - http://www.scopus.com/inward/record.url?scp=70350074640&partnerID=8YFLogxK

U2 - 10.1149/1.3236787

DO - 10.1149/1.3236787

M3 - 期刊論文

AN - SCOPUS:70350074640

VL - 12

SP - H445-H448

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 12

ER -

Ag electromigration against electron flow in Sn5Ag/Cu solder bump

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