Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd:YAG laser

Yung Chen Cheng, Chi Chih Liao, Shih Wei Feng, Chih Chung Yang, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Efficient activation of Mg acceptors for obtaining a high hole concentration is a challenging topic. In this paper, we report the results of Mg acceptor activation in GaN with irradiation of the second-harmonic photons (532 nm in wavelength) of a Q-switched Nd:YAG laser. This laser was used to irradiate two Mg-doped GaN samples of different doping concentrations. With doping concentration of 1.2 × 1018 cm-3, a hole concentration of 2.66 × 1017 cm-3 was obtained after laser-induced activation. The average temperature of samples during laser irradiation was around 30 °C. Hence, it was speculated that the irradiation process was very unlikely to be thermal annealing. PL measurements revealed that laser-induced activation could ionize not only the shallow but also the deep donors.

原文???core.languages.en_GB???
頁(從 - 到)357-360
頁數4
期刊Physica Status Solidi (B) Basic Research
228
發行號2
DOIs
出版狀態已出版 - 11月 2001

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