摘要
Efficient activation of Mg acceptors for obtaining a high hole concentration is a challenging topic. In this paper, we report the results of Mg acceptor activation in GaN with irradiation of the second-harmonic photons (532 nm in wavelength) of a Q-switched Nd:YAG laser. This laser was used to irradiate two Mg-doped GaN samples of different doping concentrations. With doping concentration of 1.2 × 1018 cm-3, a hole concentration of 2.66 × 1017 cm-3 was obtained after laser-induced activation. The average temperature of samples during laser irradiation was around 30 °C. Hence, it was speculated that the irradiation process was very unlikely to be thermal annealing. PL measurements revealed that laser-induced activation could ionize not only the shallow but also the deep donors.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 357-360 |
頁數 | 4 |
期刊 | Physica Status Solidi (B) Basic Research |
卷 | 228 |
發行號 | 2 |
DOIs | |
出版狀態 | 已出版 - 11月 2001 |