Efficient activation of Mg acceptors for obtaining a high hole concentration is a challenging topic. In this paper, we report the results of Mg acceptor activation in GaN with irradiation of the second-harmonic photons (532 nm in wavelength) of a Q-switched Nd:YAG laser. This laser was used to irradiate two Mg-doped GaN samples of different doping concentrations. With doping concentration of 1.2 × 1018 cm-3, a hole concentration of 2.66 × 1017 cm-3 was obtained after laser-induced activation. The average temperature of samples during laser irradiation was around 30 °C. Hence, it was speculated that the irradiation process was very unlikely to be thermal annealing. PL measurements revealed that laser-induced activation could ionize not only the shallow but also the deep donors.
|頁（從 - 到）||357-360|
|期刊||Physica Status Solidi (B) Basic Research|
|出版狀態||已出版 - 11月 2001|