@article{5cfb04e7bcdd410badf9cb4b4d02049e,
title = "A very high charge, high polarization gradient-doped strained GaAs photocathode",
abstract = "A high charge and polarization gradient-doped strained GaAs photocathode was discussed. A 5.0-7.5 nm p-type surface layer doped to 5 × 1019 cm-3 was found to overcome the surface charge limit while maintaining high beam polarization. The peak current capability was also determined by overlaying short pulse laser. Results showed that a peak current as high as 9.2 A was obtained.",
keywords = "GaAs photocathode, Polarized electron source",
author = "T. Maruyama and A. Brachmann and Clendenin, {J. E.} and T. Desikan and Garwin, {E. L.} and Kirby, {R. E.} and Luh, {D. A.} and J. Turner and R. Prepost",
note = "Funding Information: We thank G. Mulhollan for his contribution to the early part of this work, and T. Galetto for technical assistance. This work was supported by Department of Energy contract DE-AC03-76SF00515(SLAC) and DE-FG02-95ER40896(Wisconsin).",
year = "2002",
month = oct,
day = "11",
doi = "10.1016/S0168-9002(02)01290-1",
language = "???core.languages.en_GB???",
volume = "492",
pages = "199--211",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
number = "1-2",
}