A V-band 90-nm CMOS Divide-by-10 Injection-Locked Frequency Divider Using Current-Reused Topology

Shen Ming Li, Han Nong Yeh, Hong Yeh Chang

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

A V-band 90-nm CMOS divide-by-10 injection-locked frequency divider (ILFD) is proposed using current-reused topology in this letter. The proposed circuit is composed of a divide-by-5 ILFD and a source injection current-mode logic (SICML) divide-by-2 frequency divider. The cascoded topology of SICML and ILFD is employed to reduce dc power consumption and increase frequency division ratio. With an input power of 0 dBm, the measured maximum locking range (LR) is 5 GHz from 60.3 to 65.3 GHz. Compared with the reported CMOS microwave and millimeter-wave ILFDs, the proposed ILFD features wide LR, good sensitivity, and a high division ratio of up to ten.

原文???core.languages.en_GB???
文章編號8226801
頁(從 - 到)76-78
頁數3
期刊IEEE Microwave and Wireless Components Letters
28
發行號1
DOIs
出版狀態已出版 - 1月 2018

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