A Test Method for Finding Boundary Currents of 1T1R Memristor Memories

Tzu Ying Lin, Yong Xiao Chen, Jin Fu Li, Chih Yen Lo, Ding Ming Kwai, Yung Fa Chou

研究成果: 書貢獻/報告類型會議論文篇章同行評審

3 引文 斯高帕斯(Scopus)

摘要

Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.

原文???core.languages.en_GB???
主出版物標題Proceedings - 2016 IEEE 25th Asian Test Symposium, ATS 2016
發行者IEEE Computer Society
頁面281-286
頁數6
ISBN(電子)9781509038084
DOIs
出版狀態已出版 - 22 12月 2016
事件25th IEEE Asian Test Symposium, ATS 2016 - Hiroshima, Japan
持續時間: 21 11月 201624 11月 2016

出版系列

名字Proceedings of the Asian Test Symposium
ISSN(列印)1081-7735

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???event.eventtypes.event.conference???25th IEEE Asian Test Symposium, ATS 2016
國家/地區Japan
城市Hiroshima
期間21/11/1624/11/16

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