A Test Method for Finding Boundary Currents of 1T1R Memristor Memories

Tzu Ying Lin; Yong Xiao Chen; Jin Fu Li; Chih Yen Lo; Ding Ming Kwai; Yung Fa Chou

doi:10.1109/ATS.2016.44

A Test Method for Finding Boundary Currents of 1T1R Memristor Memories

Tzu Ying Lin, Yong Xiao Chen, Jin Fu Li, Chih Yen Lo, Ding Ming Kwai, Yung Fa Chou

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.

原文	???core.languages.en_GB???
主出版物標題	Proceedings - 2016 IEEE 25th Asian Test Symposium, ATS 2016
發行者	IEEE Computer Society
頁面	281-286
頁數	6
ISBN（電子）	9781509038084
DOIs	https://doi.org/10.1109/ATS.2016.44
出版狀態	已出版 - 22 12月 2016
事件	25th IEEE Asian Test Symposium, ATS 2016 - Hiroshima, Japan 持續時間: 21 11月 2016 → 24 11月 2016

出版系列

名字	Proceedings of the Asian Test Symposium
ISSN（列印）	1081-7735

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	25th IEEE Asian Test Symposium, ATS 2016
國家/地區	Japan
城市	Hiroshima
期間	21/11/16 → 24/11/16

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10.1109/ATS.2016.44

應用於三維積體電路可測性及可靠性設計技術-總計畫暨子計畫一：三維積體電路中堆疊式記憶體與晶粒間連接線可測性與可靠性技術
Li, J.-F. (PI)
1/05/15 → 31/07/16
研究計畫: Research

引用此

@inproceedings{c787f58795ad479291ca5fd0c335c768,

title = "A Test Method for Finding Boundary Currents of 1T1R Memristor Memories",

abstract = "Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.",

keywords = "Memristor, non-volatile memory, process variation, reliability, test",

author = "Lin, {Tzu Ying} and Chen, {Yong Xiao} and Li, {Jin Fu} and Lo, {Chih Yen} and Kwai, {Ding Ming} and Chou, {Yung Fa}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 25th IEEE Asian Test Symposium, ATS 2016 ; Conference date: 21-11-2016 Through 24-11-2016",

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doi = "10.1109/ATS.2016.44",

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Lin, TY, Chen, YX, Li, JF, Lo, CY, Kwai, DM & Chou, YF 2016, A Test Method for Finding Boundary Currents of 1T1R Memristor Memories. 於 Proceedings - 2016 IEEE 25th Asian Test Symposium, ATS 2016., 7796127, Proceedings of the Asian Test Symposium, IEEE Computer Society, 頁 281-286, 25th IEEE Asian Test Symposium, ATS 2016, Hiroshima, Japan, 21/11/16. https://doi.org/10.1109/ATS.2016.44

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T1 - A Test Method for Finding Boundary Currents of 1T1R Memristor Memories

AU - Lin, Tzu Ying

AU - Chen, Yong Xiao

AU - Li, Jin Fu

AU - Lo, Chih Yen

AU - Kwai, Ding Ming

AU - Chou, Yung Fa

PY - 2016/12/22

Y1 - 2016/12/22

N2 - Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.

AB - Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.

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KW - non-volatile memory

KW - process variation

KW - reliability

KW - test

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A Test Method for Finding Boundary Currents of 1T1R Memristor Memories

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應用於三維積體電路可測性及可靠性設計技術-總計畫暨子計畫一：三維積體電路中堆疊式記憶體與晶粒間連接線可測性與可靠性技術

引用此