@inproceedings{d565e91c3d0a47429c8f1d2819c666e3,
title = "A Si/SiGe based impact ionization avalanche transit time photodiode with ultra-high gain-bandwidth Product (690GHz) for 10-Gb/s fiber communication",
abstract = "We demonstrate Si/SiGe Impact-Ionization-Avalanche-Transit-Time Photodiodes at 830nm wavelength. It achieves an ultra-high gain-bandwidth product (690GHz, 30GHz bandwidth) with high external efficiency (53.2%) and 10Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.",
author = "Shi, {J. W.} and Kuo, {F. M.} and Hong, {F. C.} and Wu, {Y. S.} and Fulgoni, {D. J.F.} and Nash, {L. J.} and Palmer, {M. J.}",
year = "2009",
language = "???core.languages.en_GB???",
isbn = "9781557528650",
series = "Conference on Optical Fiber Communication, Technical Digest Series",
booktitle = "2009 Conference on Optical Fiber Communication, OFC 2009",
note = "2009 Conference on Optical Fiber Communication, OFC 2009 ; Conference date: 22-03-2009 Through 26-03-2009",
}