A simple adapted Gummel method for amorphous silicon device simulation

Yao Tsung Tsai; Kuo Don Hong; Yin Lun Yuan

doi:10.1109/EDMS.1994.863884

A simple adapted Gummel method for amorphous silicon device simulation

Yao Tsung Tsai, Kuo Don Hong, Yin Lun Yuan

電機工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

The paper present a simple adapted Gummel method (AGM) for amorphous silicon (a-Si) device simulation. The AGM is compared with Gummel method (GM) by two numerical experiments. The comparisons shows the AGM not only converges much faster, but also is more robust than GM. Simulation results show that the AGM is very helpful for a-Si device simulation.

原文	???core.languages.en_GB???
DOIs	https://doi.org/10.1109/EDMS.1994.863884
出版狀態	已出版 - 1994
事件	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan 持續時間: 12 7月 1994 → 15 7月 1994

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區	Taiwan
城市	Hsinchu
期間	12/07/94 → 15/07/94

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10.1109/EDMS.1994.863884

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abstract = "The paper present a simple adapted Gummel method (AGM) for amorphous silicon (a-Si) device simulation. The AGM is compared with Gummel method (GM) by two numerical experiments. The comparisons shows the AGM not only converges much faster, but also is more robust than GM. Simulation results show that the AGM is very helpful for a-Si device simulation.",

author = "Tsai, {Yao Tsung} and Hong, {Kuo Don} and Yuan, {Yin Lun}",

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AB - The paper present a simple adapted Gummel method (AGM) for amorphous silicon (a-Si) device simulation. The AGM is compared with Gummel method (GM) by two numerical experiments. The comparisons shows the AGM not only converges much faster, but also is more robust than GM. Simulation results show that the AGM is very helpful for a-Si device simulation.

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A simple adapted Gummel method for amorphous silicon device simulation

摘要

???event.eventtypes.event.conference???

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