A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors

Juh Tzeng Lue; Shyu Sheau-yang; Lyu Ling-Hsiao

doi:10.1016/0042-207X(86)90605-6

A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors

Juh Tzeng Lue, Shyu Sheau-yang, Lyu Ling-Hsiao

太空科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

A field emission cathode composed of multiple tungsten pins providing uniform discharge and a Wehnelt cylinder performing focusing and triggering are the new features of this pulsed electron beam source. We have successfully annealed ion-implanted CdTe, Culn S₂ and silicon from their damage states. The activation of p-type CdTe dopants can reach as high as 3 × 10¹⁸ cm^-3.

原文	???core.languages.en_GB???
頁（從 - 到）	275-278
頁數	4
期刊	Vacuum
卷	36
發行號	5
DOIs	https://doi.org/10.1016/0042-207X(86)90605-6
出版狀態	已出版 - 5月 1986

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10.1016/0042-207X(86)90605-6

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abstract = "A field emission cathode composed of multiple tungsten pins providing uniform discharge and a Wehnelt cylinder performing focusing and triggering are the new features of this pulsed electron beam source. We have successfully annealed ion-implanted CdTe, Culn S2 and silicon from their damage states. The activation of p-type CdTe dopants can reach as high as 3 × 1018 cm-3.",

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AB - A field emission cathode composed of multiple tungsten pins providing uniform discharge and a Wehnelt cylinder performing focusing and triggering are the new features of this pulsed electron beam source. We have successfully annealed ion-implanted CdTe, Culn S2 and silicon from their damage states. The activation of p-type CdTe dopants can reach as high as 3 × 1018 cm-3.

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A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors

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