A Reliable Triple-Level Operation of Resistive-Gate Flash Featuring Forming-Free and High Immunity to Sneak Path

W. Y. Yang, E. R. Hsieh, C. H. Cheng, B. Y. Chen, K. S. Li, Steve S. Chung

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

We demonstrated for the first time a triple-level operation of a resistive-gate Flash (RG-Flash) on a FinFET platform. Comprehensive reliabilities have been examined. The results show the forming-free property, low programming (PGM) current (<0.1uA), and ultra-fast PGM time (<10ns), enabling extremely high active energy efficiency, 3 fJ/switching. Furthermore, a multi-level capability featuring a 3-bit-per-cell (8 levels) operation has been demonstrated successfully. We have also achieved more than 105 cycles endurance and excellent data retention for each level in 125°C for over one month. The array-level reliability is also evaluated, showing well disturbance-immune during SET/RESET, no sneak-path issues, which keep healthy signal-to-noise margin, with window= 10x between two levels, even if the array is expanded to 1 million-cells size. This work provides a strong candidate for the next generation Flash with resistive switching and CMOS process compatibility.

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主出版物標題2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728168937
DOIs
出版狀態已出版 - 3月 2021
事件2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Virtual, Monterey, United States
持續時間: 21 3月 202124 3月 2021

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2021-March
ISSN(列印)1541-7026

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???event.eventtypes.event.conference???2021 IEEE International Reliability Physics Symposium, IRPS 2021
國家/地區United States
城市Virtual, Monterey
期間21/03/2124/03/21

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