摘要
A uniplanar GaAs MMIC diode mixer Is fabricated for Q-band applications using the lumped-element coplanar waveguide-to-slotline transition to implement the required 180 ° hybrid. By adopting the lumped-element transition, the mixer chip size can be largely reduced with an excellent RF-to-IF isolation. This mixer is designed to operate with RF frequency from 34.5 to 43 GHz, IF frequency from 0.5 to 9 GHz, and LO frequency at 34 GHz. The lower sideband conversion loss is about 7 dB, and the isolations are all better than 20 dB. To our best knowledge, it is the first MMIC with such transition topology in Q-band.
| 原文 | ???core.languages.en_GB??? |
|---|---|
| 頁（從 - 到） | 103-106 |
| 頁數 | 4 |
| 期刊 | IEEE MTT-S International Microwave Symposium Digest |
| 卷 | 1 |
| 出版狀態 | 已出版 - 2003 |
| 事件 | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States 持續時間: 8 6月 2003 → 13 6月 2003 |