A Pseudomorphic GaInP/InP MESFET with Improved Device Performance

K. C. Lin, Y. M. Hsin, C. Y. Chang

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

A high bandgap GaInP epitaxial material was grown on InP to increase the Schottky barrier height of the InP MESFET. The Schottky gate materials used in this study were Au and Pt2Si. The pseudomorphic GaInP/InP MESFET with Au gate has a Schottky barrier height of 0.54 eV and the reverse leakage current of the device is 10 -2 times lower than the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET were 66.7 and 104.2 mS/mm respectively for the 5 μm gate length GaInP/InP MESFET.

原文???core.languages.en_GB???
頁(從 - 到)2361-2362
頁數2
期刊IEEE Transactions on Electron Devices
40
發行號12
DOIs
出版狀態已出版 - 12月 1993

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