摘要
The PNP-GaN gate AlGaN/GaN high electron mobility transistor was proposed and demonstrated in this study by adding a PN-GaN diode into the p-GaN gate structure to form a PNP-GaN gate structure. The new gate structure blocks the hole injection and improves the gate reliability verified by TCAD simulations. The new PNP-GaN gate structure can reduce the electric field on the Schottky diode and redistribute the maximum electric field from the metal Schottky gate to the NP-GaN diode due to additional voltage drops. Compared to the p-GaN gate structure, the PNP-GaN gate structure exhibits a lower gate leakage current (~ 3.4 × 10−3 mA/mm @ VGS =10 V) and a higher gate breakdown voltage 19.8 V. Moreover, the PNP-GaN gate HEMT shows a large threshold voltage (VTH) of 2.96 V, a high on/off current ratio of 9.4
原文 | ???core.languages.en_GB??? |
---|---|
頁面 | 251-254 |
頁數 | 4 |
出版狀態 | 已出版 - 2022 |
事件 | 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 - Monterey, United States 持續時間: 9 5月 2022 → 12 5月 2022 |
???event.eventtypes.event.conference???
???event.eventtypes.event.conference??? | 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 |
---|---|
國家/地區 | United States |
城市 | Monterey |
期間 | 9/05/22 → 12/05/22 |