A PNP-GaN Gate AlGaN/GaN HEMT with Improved Gate Characteristics

Meng Hsuan Tsai, Chia Jung Tsai, Xin Rong You, Yue Ming Hsin

研究成果: 會議貢獻類型會議論文同行評審

摘要

The PNP-GaN gate AlGaN/GaN high electron mobility transistor was proposed and demonstrated in this study by adding a PN-GaN diode into the p-GaN gate structure to form a PNP-GaN gate structure. The new gate structure blocks the hole injection and improves the gate reliability verified by TCAD simulations. The new PNP-GaN gate structure can reduce the electric field on the Schottky diode and redistribute the maximum electric field from the metal Schottky gate to the NP-GaN diode due to additional voltage drops. Compared to the p-GaN gate structure, the PNP-GaN gate structure exhibits a lower gate leakage current (~ 3.4 × 10−3 mA/mm @ VGS =10 V) and a higher gate breakdown voltage 19.8 V. Moreover, the PNP-GaN gate HEMT shows a large threshold voltage (VTH) of 2.96 V, a high on/off current ratio of 9.4

原文???core.languages.en_GB???
頁面251-254
頁數4
出版狀態已出版 - 2022
事件2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 - Monterey, United States
持續時間: 9 5月 202212 5月 2022

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???event.eventtypes.event.conference???2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022
國家/地區United States
城市Monterey
期間9/05/2212/05/22

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