A perovskite cell with a record-high-Voc of 1.61 v based on solvent annealed CH3NH3PbBr3/ICBA active layer

Chun Guey Wu, Chien Hung Chiang, Sheng Hsiung Chang

研究成果: 雜誌貢獻期刊論文同行評審

105 引文 斯高帕斯(Scopus)

摘要

A high open-circuit voltage inverted perovskite solar cell based on a CH3NH3PbBr3 absorber and ICBA acceptor is reported. The CH3NH3PbBr3 film fabricated under ambient atmosphere at a moderate temperature (∼100 °C) using a two-step spin-coating method is composed of aggregated nano-grains. Upon solvent annealing of the CH3NH3PbBr3/ICBA film, the efficiency of the resulting cell increases from 1.71% to 7.50% with a remarkably high open circuit voltage (Voc) of ca. 1.60 V. ICBA acts not only as a high LUMO acceptor to realize high Voc but also as a mending agent to increase the efficiency of the cell by penetrating into the defects/voids of the CH3NH3PbBr3 film via solvent annealing as evidenced by TRPL, XPS and SEM data. Solvent annealing of the active layer was proved to be simple and effective device engineering to improve the efficiency of the perovskite cell based on a low quality film and the Voc of the inverted perovskite cell can be tuned by the LUMO level of the acceptor were revealed. The CH3NH3PbBr3/ICBA film is semi-transparent with an average 50% transmittance under visible light. The moderatetemperature processed CH3NH3PbBr3 solar cell with high Voc and a semi-transparent absorber has great potential for application as the top cell in a tandem solar cell.

原文???core.languages.en_GB???
頁(從 - 到)4077-4085
頁數9
期刊Nanoscale
8
發行號7
DOIs
出版狀態已出版 - 21 2月 2016

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