A Pd-PdO Film Potentiometric pH Sensor

Vasilios A. Karagounis; Chung Chiun Liu; Michael R. Neuman; Lubomyr T. Romankiw; P. A. Leary; J. J. Cuomo

doi:10.1109/TBME.1986.325885

A Pd-PdO Film Potentiometric pH Sensor

Vasilios A. Karagounis, Chung Chiun Liu, Michael R. Neuman, Lubomyr T. Romankiw, P. A. Leary, J. J. Cuomo

材料科學與工程研究所

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

Palladium-palladium oxide film formed by the RF reactive sputtering technique was used for pH measurement. The potentiometric mode of operation was employed and an Ag/AgCl electrode was used as the reference electrode. The Pd-PdO film was formed on both alumina and polycrystalline silicon, and sputtering conditions to produce Pd-PdO film with good pH response characteristics were empirically defined. The Pd-PdO showed good pH response, ~ 54 mV/[pH] at 25°C over the pH range of 3–9. The temperature dependency and dissolved oxygen effect on the film when used as a pH sensor were investigated and discussed.

原文	???core.languages.en_GB???
頁（從 - 到）	113-116
頁數	4
期刊	IEEE Transactions on Biomedical Engineering
卷	BME-33
發行號	2
DOIs	https://doi.org/10.1109/TBME.1986.325885
出版狀態	已出版 - 2月 1986

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10.1109/TBME.1986.325885

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AU - Karagounis, Vasilios A.

AU - Liu, Chung Chiun

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AU - Leary, P. A.

AU - Cuomo, J. J.

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AB - Palladium-palladium oxide film formed by the RF reactive sputtering technique was used for pH measurement. The potentiometric mode of operation was employed and an Ag/AgCl electrode was used as the reference electrode. The Pd-PdO film was formed on both alumina and polycrystalline silicon, and sputtering conditions to produce Pd-PdO film with good pH response characteristics were empirically defined. The Pd-PdO showed good pH response, ~ 54 mV/[pH] at 25°C over the pH range of 3–9. The temperature dependency and dissolved oxygen effect on the film when used as a pH sensor were investigated and discussed.

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A Pd-PdO Film Potentiometric pH Sensor

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