A novel X-band CMOS asymmetric T/R switch with high-pass TX arm and low-pass RX arm

In this work, a novel asymmetric T/R switch is proposed. The operating principle and design equations of the proposed T/R switch topology are presented. Based on the proposed circuit topology, an X-band asymmetric T/R switch is designed in 0.18-µm CMOS. From 9 to 11 GHz, the measured isolation is higher than 32 dB and the measured insertion loss is less than 1.87 dB for the TX mode. At 10 GHz, the measured TX-mode (Figure presented.) is higher than 36 dBm.