@inproceedings{914d6a7dfdc543bdbd749ee31de49e97,
title = "A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications",
abstract = "A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named Rewritable One-time- programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of- the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.",
author = "Cheng, {H. W.} and Hsieh, {E. R.} and Huang, {Z. H.} and Chuang, {C. H.} and Chen, {C. H.} and Li, {F. L.} and Lo, {Y. M.} and Liu, {C. H.} and Chung, {Steve S.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 ; Conference date: 16-04-2018 Through 19-04-2018",
year = "2018",
month = jul,
day = "3",
doi = "10.1109/VLSI-TSA.2018.8403852",
language = "???core.languages.en_GB???",
series = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",
}