A novel one transistor resistance-gate nonvolatile memory

Steve S. Chung, E. R. Hsieh, S. P. Yang, C. H. Chuang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

5 引文 斯高帕斯(Scopus)

摘要

For the first time, we propose a one transistor resistance-gate nonvolatile memory (RG-NVM) which comprises a simple MIM structure on top of the transistor gate while readout is taken from the transistor Vth or Id, similar to that of flash memory. A bilayer MIM is preferable for quality performance. The program/erase operation of the memory is made by the edge-tunneling between source/drain and the top gate. Results demonstrated that this memory exhibits good endurance, retention, and can solve the sneak path issues of conventional crossbar ReRAM.

原文???core.languages.en_GB???
主出版物標題74th Annual Device Research Conference, DRC 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509028276
DOIs
出版狀態已出版 - 22 8月 2016
事件74th Annual Device Research Conference, DRC 2016 - Newark, United States
持續時間: 19 6月 201622 6月 2016

出版系列

名字Device Research Conference - Conference Digest, DRC
2016-August
ISSN(列印)1548-3770

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???74th Annual Device Research Conference, DRC 2016
國家/地區United States
城市Newark
期間19/06/1622/06/16

指紋

深入研究「A novel one transistor resistance-gate nonvolatile memory」主題。共同形成了獨特的指紋。

引用此