@inproceedings{2a82cce1ff6b427c84536355042bfa37,
title = "A novel one transistor resistance-gate nonvolatile memory",
abstract = "For the first time, we propose a one transistor resistance-gate nonvolatile memory (RG-NVM) which comprises a simple MIM structure on top of the transistor gate while readout is taken from the transistor Vth or Id, similar to that of flash memory. A bilayer MIM is preferable for quality performance. The program/erase operation of the memory is made by the edge-tunneling between source/drain and the top gate. Results demonstrated that this memory exhibits good endurance, retention, and can solve the sneak path issues of conventional crossbar ReRAM.",
author = "Chung, {Steve S.} and Hsieh, {E. R.} and Yang, {S. P.} and Chuang, {C. H.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 74th Annual Device Research Conference, DRC 2016 ; Conference date: 19-06-2016 Through 22-06-2016",
year = "2016",
month = aug,
day = "22",
doi = "10.1109/DRC.2016.7548507",
language = "???core.languages.en_GB???",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "74th Annual Device Research Conference, DRC 2016",
}