A novel dry process that prepared in mixing with a pore-forming agent employs a single batch process in production of grinding wheels with the advantage without using resin liquid as an additive binder. The agglomeration of a pore-forming agent can be avoided due to no dressing agent mixing with the superfine diamond abrasives and binders. Bulk mass production can still ensure to fulfill the excellent homogeneity in mixing cross the entire grinding wheel. Therefore, an uneven mixing caused by mixing errors and human factors can be minimized. The grinding wheel can reach an ultrahigh porosity (~82 %) at a lower sintering temperature of 620 °C. Low-temperature sintering can effectively reduce the carbon footprint. A thermogravimetric-differential scanning calorimeter (TG-DSC) was used to determine the thermal properties of superfine frits. Further characterization of ultrafine binders by an optical non-contact dilatometry is utilized to set-up a protocol sintering plan of grinding wheels. Microstructure from scanning electron microscope (SEM) measurement on grinding wheel presents a uniform large pore structure which offers a benefit to wafer surface removal and less scorching during grinding. Atomic force microscopy (AFM), laser scanning digital microscope (LSCM) and SEM results revealed that the ground silicon (Si) wafer had a low surface roughness (~6 nm), without deep scratches, and with a low damaged layer (~0.7 μm) respectively. The wear test on grinding wheels demonstrates it is very cost effective to use a dry processing wheel. This work provides a new method for grinding Si wafers with a new type of wheel being developed by a novel dry superfine diamond grinding technique in a manufacturing process. It is realized that the use of a dry grinding process can save part of chemical polishing process (CMP) and effectively reduces the polishing time.