@inproceedings{c59bab1058834d21a091cc226b1deca5,
title = "A novel and direct experimental observation of the discrete dopant effect in ultra-scaled CMOS devices",
abstract = "For the first time, the channel discrete dopant profiling (DDP) of small devices are demonstrated experimentally based on a quasi-2D Vth model. The discrete -dopant distribution along the channel direction can be determined. Boron cluster in nMOSFETs was observed, resulting in a larger V th variation, in comparison to that of pMOSFETs. Moreover, experiments have been extended to the advanced strain-CMOS devices. For the SiC S/D nMOSFET, the carbon out-diffusion has been identified; for SiGe S/D pMOSFET, Ge out-diffusion has also been observed. This approach provides a direct-observation of the random dopant fluctuation (RDF) and is useful for studying the Vth variability of future generation CMOS devices.",
author = "Hsieh, {E. R.} and Chung, {Steve S.} and Tsai, {C. H.} and Huang, {R. M.} and Tsai, {C. T.} and Liang, {C. W.}",
year = "2011",
language = "???core.languages.en_GB???",
isbn = "9784863481640",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "194--195",
booktitle = "2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers",
note = "2011 Symposium on VLSI Technology, VLSIT 2011 ; Conference date: 14-06-2011 Through 16-06-2011",
}