A new variation plot to examine the interfacial-dipole induced work-function variation in advanced high-k metal-gate CMOS devices

E. R. Hsieh, Y. D. Wang, Steve S. Chung, J. C. Ke, C. W. Yang, S. Hsu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

指紋

深入研究「A new variation plot to examine the interfacial-dipole induced work-function variation in advanced high-k metal-gate CMOS devices」主題。共同形成了獨特的指紋。

Engineering & Materials Science