A new variation plot to examine the interfacial-dipole induced work-function variation in advanced high-k metal-gate CMOS devices

E. R. Hsieh, Y. D. Wang, Steve S. Chung, J. C. Ke, C. W. Yang, S. Hsu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

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Keyphrases

Engineering

Material Science