A new variation plot to examine the interfacial-dipole induced work-function variation in advanced high-k metal-gate CMOS devices
E. R. Hsieh, Y. D. Wang, Steve S. Chung, J. C. Ke, C. W. Yang, S. Hsu
研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審
2
引文
斯高帕斯(Scopus)