@inproceedings{8d2353be5bb94201a4d41e10d54633a5,
title = "A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching",
abstract = "We introduce a non-volatile ternary content-addressable memory (nv-TCAM), composed of 1 metal-ferroelectricmetal (MFM (1C)), 1 control-transistor (1T), and 1 metalinsulator-metal (MIM (1R)). The MFM gating a transistor provides the functionality of the 'Care' or 'Don't-care'; meanwhile, the MIM in connection of the drain of the transistor stores a datum to be searched. Results show that the MFM can be cycled 1010 times, and the MIM is up to 106 times. Moreover, a datum can be kept in the MFM and MIM at 91 ° C and 129 °C for predicted 10-year lifetime, respectively. The readout window for the searching bit-'1' / '0' is 0.66 V and 0.8 V, respectively. The searching time is 9 ns with an averaged 22.8 μW of power.",
keywords = "RRAM, ferro-electricity, in-memory-searching, memristor, nv-TCAM",
author = "Hsueh, {Y. L.} and Lin, {R. Q.} and Huang, {Y. X.} and Lin, {Y. H.} and Chang, {K. H.} and Shen, {T. H.} and Hsieh, {E. R.} and Wong, {S. Simon}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",
year = "2024",
doi = "10.1109/EDTM58488.2024.10512294",
language = "???core.languages.en_GB???",
series = "IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IEEE Electron Devices Technology and Manufacturing Conference",
}