This letter describes a monolithic 3.5-to-6.5 GHz stacked power amplifier (PA) in 2 μ m 0.5 μm GaAs HBT-HEMT process. The proposed PA is designed using both HBT and HEMT. Based on a common-emitter (CE) configuration of HBT with a stacked common-gate (CG) configuration of HEMT, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier due to high output stacking impedance. By using the proposed method, the stacked PA demonstrates a maximum output power of 29.4 dBm, a compact chip size of 1.5 × 1 mm 2, and a maximum power added efficiency (PAE) of 38%. The output power of the proposed PA is higher than 26.5 dBm between 3.5 and 6.5 GHz.
|頁（從 - 到）||474-476|
|期刊||IEEE Microwave and Wireless Components Letters|
|出版狀態||已出版 - 2012|