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A low-power area-efficient SRAM with enhanced read stability in 0.18-μm CMOS
Cihun Siyong Alex Gong, Ci Tong Hong, Kai Wen Yao,
Muh Tian Shiue
電機工程學系
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引文 斯高帕斯(Scopus)
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Keyphrases
Low Power
100%
Area-efficient
100%
Static Random Access Memory
100%
Read Stability
100%
Transistor
16%
Memory Cell
16%
Power Consumption
16%
Power Source
16%
CMOS Process
16%
Power Efficiency
16%
Aspect Ratio
16%
Power Efficient
16%
Power Supply
16%
Bitline
16%
Read Operation
16%
Conventional Architecture
16%
Memory Architecture
16%
Read Static Noise Margin
16%
Direct Connection
16%
Inverter Circuit
16%
Efficient Operation
16%
Pre-charge
16%
Conventional Counterpart
16%
Write Cycle
16%
Memory Circuits
16%
Cell Area
16%
Engineering
Random Access Memory
100%
Power Supply
16%
Electric Power Utilization
16%
Nodes
16%
Similarities
16%
Bit Line
16%
Direct Connection
16%
Noise Margin
16%
Cell Area
16%
Aspect Ratio
16%
Inverter
16%