A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

Chih Cheng Chuang; Hwann Kaeo Chiou

doi:10.1109/RFIT52905.2021.9565205

A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

Chih Cheng Chuang
, Hwann Kaeo Chiou

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.

原文	???core.languages.en_GB???
主出版物標題	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665433914
DOIs	https://doi.org/10.1109/RFIT52905.2021.9565205
出版狀態	已出版 - 25 8月 2021
事件	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan 持續時間: 25 8月 2021 → 27 8月 2021

出版系列

名字	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
國家/地區	Taiwan
城市	Hualien
期間	25/08/21 → 27/08/21

存取文件

10.1109/RFIT52905.2021.9565205

應用於5G小型基地站寬信號頻寬高線性度低記憶效應之功率放大器與發射機研究(2/3)
Chiou, H.-K. (PI)
1/08/21 → 31/07/22
研究計畫: Research

引用此

Chuang, C. C., & Chiou, H. K. (2021). A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology. 於 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT52905.2021.9565205

@inproceedings{1c0adb57921a423b823eaf55edff6ed7,

title = "A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology",

abstract = "This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN{\texttrademark} 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9\%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.",

keywords = "GaN on SiC, VCO, X-band, class-E, power oscillator",

author = "Chuang, \{Chih Cheng\} and Chiou, \{Hwann Kaeo\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 ; Conference date: 25-08-2021 Through 27-08-2021",

year = "2021",

month = aug,

day = "25",

doi = "10.1109/RFIT52905.2021.9565205",

language = "???core.languages.en\_GB???",

series = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",

}

Chuang, CC & Chiou, HK 2021, A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology. 於 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Hualien, Taiwan, 25/08/21. https://doi.org/10.1109/RFIT52905.2021.9565205

A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology. / Chuang, Chih Cheng; Chiou, Hwann Kaeo.
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

AU - Chuang, Chih Cheng

AU - Chiou, Hwann Kaeo

PY - 2021/8/25

Y1 - 2021/8/25

N2 - This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.

AB - This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.

KW - GaN on SiC

KW - VCO

KW - X-band

KW - class-E

KW - power oscillator

UR - https://www.scopus.com/pages/publications/85118185941

U2 - 10.1109/RFIT52905.2021.9565205

DO - 10.1109/RFIT52905.2021.9565205

M3 - 會議論文篇章

AN - SCOPUS:85118185941

T3 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

BT - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Y2 - 25 August 2021 through 27 August 2021

ER -

Chuang CC, Chiou HK. A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology. 於 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). doi: 10.1109/RFIT52905.2021.9565205

A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

摘要

出版系列

???event.eventtypes.event.conference???

存取文件

指紋

專案

應用於5G小型基地站寬信號頻寬高線性度低記憶效應之功率放大器與發射機研究(2/3)

引用此