A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

Chih Cheng Chuang, Hwann Kaeo Chiou

研究成果: 書貢獻/報告類型會議論文篇章同行評審

6 引文 斯高帕斯(Scopus)

摘要

This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.

原文???core.languages.en_GB???
主出版物標題2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665433914
DOIs
出版狀態已出版 - 25 8月 2021
事件2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan
持續時間: 25 8月 202127 8月 2021

出版系列

名字2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
國家/地區Taiwan
城市Hualien
期間25/08/2127/08/21

指紋

深入研究「A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology」主題。共同形成了獨特的指紋。

引用此