摘要
A V-Band fully integrated complementary push-push VCO is first presented in 0.18-μm bulk CMOS technologies. Thin-film microstrip (TFMS) lines are utilized in the circuit to reduce the conductive substrate effect In order to lower the phase noise, complementary cross-coupled pairs are used to generate negative conductance. The measured phase noise at 1-MHz offset is about -97 dBc/Hz at 52.6 GHz and is -104 dBc/Hz at 26.3 GHz. To the author's best knowledge, this complementary CMOS VCO achieves the lowest phase noise in comparison with other VCOs using standard bulk CMOS processes in V-Band.
原文 | ???core.languages.en_GB??? |
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文章編號 | RMO2B-4 |
頁(從 - 到) | 131-134 |
頁數 | 4 |
期刊 | Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium |
出版狀態 | 已出版 - 2005 |
事件 | 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States 持續時間: 12 6月 2005 → 14 6月 2005 |