摘要
A device architecture is proposed to improve the linearity of barium strontium titanate (BST) capacitors while maintaining the tunability and the quality factor. Thin-film parallel plate capacitors are fabricated utilizing the proposed architecture. The measurement results successfully demonstrate the effectiveness of this approach. Up to 14 dB of improvement on IIP3 is observed.
| 原文 | ???core.languages.en_GB??? |
|---|---|
| 文章編號 | 4014960 |
| 頁(從 - 到) | 560-563 |
| 頁數 | 4 |
| 期刊 | IEEE MTT-S International Microwave Symposium Digest |
| DOIs | |
| 出版狀態 | 已出版 - 2006 |
| 事件 | 2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States 持續時間: 11 6月 2006 → 16 6月 2006 |