摘要
A device architecture is proposed to improve the linearity of barium strontium titanate (BST) capacitors while maintaining the tunability and the quality factor. Thin-film parallel plate capacitors are fabricated utilizing the proposed architecture. The measurement results successfully demonstrate the effectiveness of this approach. Up to 14 dB of improvement on IIP3 is observed.
原文 | ???core.languages.en_GB??? |
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文章編號 | 4014960 |
頁(從 - 到) | 560-563 |
頁數 | 4 |
期刊 | IEEE MTT-S International Microwave Symposium Digest |
DOIs | |
出版狀態 | 已出版 - 2006 |
事件 | 2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States 持續時間: 11 6月 2006 → 16 6月 2006 |