A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers

Shih Hao Lai; Wei Cheng Chen; Jung Chou; Yong Le Wang; Yu Chia Su; Hong Yeh Chang

doi:10.1109/RFIT58767.2023.10243320

A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers

Shih Hao Lai
, Wei Cheng Chen
, Jung Chou
, Yong Le Wang
, Yu Chia Su
, Hong Yeh Chang

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

This paper presents a Ka-band low-noise high-gain frontend receiver in monolithic enhancement-mode PINHEMT technology. The presented receiver comprises a single-pole double-Throw (SPDT) switch, a low-noise amplifier (LNA), and a power detector. The SPDT is designed using quarter-wavelength transmission lines with PIN diodes and features low insertion loss and high isolation. The LNA consists of three gain stages based on HEMT, and it has a low noise figure and high gain. The power detector is based on a square-law detection and features high responsivity (RV) and low noise-equivalent power (NEP). The receiver achieves a minimum NEP of 1.2 fW/√Hz at 33 GHz with a peak RV of 4 MV/W, and a 3-dB bandwidth of 2.6 GHz. This work is suitable for a few millimeter-wave radiometers due to its superior performance and high integration.

原文	???core.languages.en_GB???
主出版物標題	2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	53-55
頁數	3
ISBN（電子）	9798350324402
DOIs	https://doi.org/10.1109/RFIT58767.2023.10243320
出版狀態	已出版 - 2023
事件	2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 - Cairns, Australia 持續時間: 14 8月 2023 → 16 8月 2023

出版系列

名字	2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023
國家/地區	Australia
城市	Cairns
期間	14/08/23 → 16/08/23

存取文件

10.1109/RFIT58767.2023.10243320

使用異質整合積體電路技術之下世代毫米波通訊收發機研究(2/3)
Chang, H.-Y. (PI)
1/08/22 → 31/07/23
研究計畫: Research

引用此

Lai, S. H., Chen, W. C., Chou, J., Wang, Y. L., Su, Y. C., & Chang, H. Y. (2023). A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers. 於 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 (頁 53-55). (2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT58767.2023.10243320

Lai, Shih Hao ; Chen, Wei Cheng ; Chou, Jung 等. / A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers. 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023. Institute of Electrical and Electronics Engineers Inc., 2023. 頁 53-55 (2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023).

@inproceedings{087f5fa57ff445e5b611597cba1071f7,

title = "A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers",

abstract = "This paper presents a Ka-band low-noise high-gain frontend receiver in monolithic enhancement-mode PINHEMT technology. The presented receiver comprises a single-pole double-Throw (SPDT) switch, a low-noise amplifier (LNA), and a power detector. The SPDT is designed using quarter-wavelength transmission lines with PIN diodes and features low insertion loss and high isolation. The LNA consists of three gain stages based on HEMT, and it has a low noise figure and high gain. The power detector is based on a square-law detection and features high responsivity (RV) and low noise-equivalent power (NEP). The receiver achieves a minimum NEP of 1.2 fW/√Hz at 33 GHz with a peak RV of 4 MV/W, and a 3-dB bandwidth of 2.6 GHz. This work is suitable for a few millimeter-wave radiometers due to its superior performance and high integration.",

keywords = "GaAs, HEMT, MMIC, PIN diode, low noise, millimeter-wave, receiver",

author = "Lai, \{Shih Hao\} and Chen, \{Wei Cheng\} and Jung Chou and Wang, \{Yong Le\} and Su, \{Yu Chia\} and Chang, \{Hong Yeh\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 ; Conference date: 14-08-2023 Through 16-08-2023",

year = "2023",

doi = "10.1109/RFIT58767.2023.10243320",

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series = "2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023",

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Lai, SH, Chen, WC, Chou, J, Wang, YL, Su, YC & Chang, HY 2023, A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers. 於 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023. 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023, Institute of Electrical and Electronics Engineers Inc., 頁 53-55, 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023, Cairns, Australia, 14/08/23. https://doi.org/10.1109/RFIT58767.2023.10243320

A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers. / Lai, Shih Hao; Chen, Wei Cheng; Chou, Jung 等.
2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 53-55 (2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

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T1 - A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers

AU - Lai, Shih Hao

AU - Chen, Wei Cheng

AU - Chou, Jung

AU - Wang, Yong Le

AU - Su, Yu Chia

AU - Chang, Hong Yeh

PY - 2023

Y1 - 2023

N2 - This paper presents a Ka-band low-noise high-gain frontend receiver in monolithic enhancement-mode PINHEMT technology. The presented receiver comprises a single-pole double-Throw (SPDT) switch, a low-noise amplifier (LNA), and a power detector. The SPDT is designed using quarter-wavelength transmission lines with PIN diodes and features low insertion loss and high isolation. The LNA consists of three gain stages based on HEMT, and it has a low noise figure and high gain. The power detector is based on a square-law detection and features high responsivity (RV) and low noise-equivalent power (NEP). The receiver achieves a minimum NEP of 1.2 fW/√Hz at 33 GHz with a peak RV of 4 MV/W, and a 3-dB bandwidth of 2.6 GHz. This work is suitable for a few millimeter-wave radiometers due to its superior performance and high integration.

AB - This paper presents a Ka-band low-noise high-gain frontend receiver in monolithic enhancement-mode PINHEMT technology. The presented receiver comprises a single-pole double-Throw (SPDT) switch, a low-noise amplifier (LNA), and a power detector. The SPDT is designed using quarter-wavelength transmission lines with PIN diodes and features low insertion loss and high isolation. The LNA consists of three gain stages based on HEMT, and it has a low noise figure and high gain. The power detector is based on a square-law detection and features high responsivity (RV) and low noise-equivalent power (NEP). The receiver achieves a minimum NEP of 1.2 fW/√Hz at 33 GHz with a peak RV of 4 MV/W, and a 3-dB bandwidth of 2.6 GHz. This work is suitable for a few millimeter-wave radiometers due to its superior performance and high integration.

KW - GaAs

KW - HEMT

KW - MMIC

KW - PIN diode

KW - low noise

KW - millimeter-wave

KW - receiver

UR - https://www.scopus.com/pages/publications/85174274238

U2 - 10.1109/RFIT58767.2023.10243320

DO - 10.1109/RFIT58767.2023.10243320

M3 - 會議論文篇章

AN - SCOPUS:85174274238

T3 - 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023

SP - 53

EP - 55

BT - 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023

Y2 - 14 August 2023 through 16 August 2023

ER -

Lai SH, Chen WC, Chou J, Wang YL, Su YC, Chang HY. A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers. 於 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 53-55. (2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023). doi: 10.1109/RFIT58767.2023.10243320

A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers

摘要

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使用異質整合積體電路技術之下世代毫米波通訊收發機研究(2/3)

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