A Ka-band 35-dBm P0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection

Jung Chou, Wei Cheng Chen, Yong Le Wang, Yi Fu Chen, Hong Yeh Chang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, a Ka-band monolithic high-power low-loss single-port double-throw (SPDT) switch is proposed using a GaAs PIN process. The switch is designed using an innovative anti-series diode connection to significantly enhance 1-dB compression point, since the turned-on issue of the diode can be effectively resolved under high-power driving. Between 25 and 30 GHz, the proposed SPDT switch features a measured insertion loss of within 1.2 dB, an isolation of higher than 20 dB, and an input 0.1-dB compression point (P0.1dB) of higher than 35 dBm. As compared with prior art, this work is suitable for high-power applications in microwave and millimeter-wave bands due to its superior performance and compact chip size.

原文???core.languages.en_GB???
主出版物標題2023 IEEE/MTT-S International Microwave Symposium, IMS 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1112-1115
頁數4
ISBN(電子)9798350347647
DOIs
出版狀態已出版 - 2023
事件2023 IEEE/MTT-S International Microwave Symposium, IMS 2023 - San Diego, United States
持續時間: 11 6月 202316 6月 2023

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2023-June
ISSN(列印)0149-645X

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???2023 IEEE/MTT-S International Microwave Symposium, IMS 2023
國家/地區United States
城市San Diego
期間11/06/2316/06/23

指紋

深入研究「A Ka-band 35-dBm P0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection」主題。共同形成了獨特的指紋。

引用此