@inproceedings{be21999e45ec438f8f5c9daa6301fdc6,
title = "A Ka-band 25-dBm output power high efficiency monolithic Doherty power amplifier in 0.15-μm GaAs E-mode pHEMT process",
abstract = "A Ka-band Doherty power amplifier (PA) is presented in this paper. The proposed Doherty PA is designed using 0.15-μm GaAs enhancement-mode pHEMT process to achieve an output saturation power up to 25.1 dBm. The quarter-wave transmission lines and offset lines are implemented using inductance-capacitance lumped elements to reduce significantly the chip area. With a compact chip size of 1.5×1.5 mm2, the measured small signal gain, input and output return losses at 25.8 GHz are better than 7 dB, 15 dB, and 29 dB, respectively. The proposed Doherty PA achieves a peak power-added efficiency of 16.5% and a 6-dB back-off efficiency of 12.6%. This work has potential for the high-power high-efficiency communication system as compared to previously reported Doherty PAs.",
keywords = "Doherty power amplifier (DPA), GaAs, Ka-band, microwave, millimeter-wave, MMIC, RFIC",
author = "Lin, {Yu An} and Ji, {Jien Rong} and Chien, {Tzu Han} and Chang, {Hong Yeh} and Wang, {Yu Chi}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE Asia Pacific Microwave Conference, APMC 2017 ; Conference date: 13-11-2017 Through 16-11-2017",
year = "2017",
month = jun,
day = "28",
doi = "10.1109/APMC.2017.8251616",
language = "???core.languages.en_GB???",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "984--987",
editor = "Idnin Pasya",
booktitle = "2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings",
}