A K -Band High Efficiency High Power Monolithic GaAs Power Oscillator Using Class-E Network

Hong Yeh Chang, Chi Hsien Lin, Yu Cheng Liu, Wen Ping Li, Yu Chi Wang

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated region with overdriven condition to obtain the bifurcated current waveform. The proposed power oscillator is fabricated using a 0.15- μ m GaAs pseudomorphic high-electron mobility transistor process, and it features a tuning range from 23.5 to 24.5 GHz, a peak efficiency of 19%, a maximum output power of 21 dBm, and a phase noise of -106.3 dBc/Hz at 1-MHz offset.

原文???core.languages.en_GB???
文章編號7792653
頁(從 - 到)55-57
頁數3
期刊IEEE Microwave and Wireless Components Letters
27
發行號1
DOIs
出版狀態已出版 - 1月 2017

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