摘要
This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated region with overdriven condition to obtain the bifurcated current waveform. The proposed power oscillator is fabricated using a 0.15- μ m GaAs pseudomorphic high-electron mobility transistor process, and it features a tuning range from 23.5 to 24.5 GHz, a peak efficiency of 19%, a maximum output power of 21 dBm, and a phase noise of -106.3 dBc/Hz at 1-MHz offset.
原文 | ???core.languages.en_GB??? |
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文章編號 | 7792653 |
頁(從 - 到) | 55-57 |
頁數 | 3 |
期刊 | IEEE Microwave and Wireless Components Letters |
卷 | 27 |
發行號 | 1 |
DOIs | |
出版狀態 | 已出版 - 1月 2017 |