A K-band high efficiency high output power CG-CS frequency doubler in 0.5-m GaAs E/D-mode PHEMT process

Shou Hsien Weng, Guan Yu Chen, Hong Yeh Chang, Yue Ming Hsin

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

A K-band high efficiency high output power frequency doubler in a 0.5-μm GaAs enhancement- and depletion-mode pseudomorphic high electron-mobility transistor (E/D-mode PHEMT) technology is presented in this paper. The doubler employs a configuration of a common-gate (CG) field effect transistor (FET) /common-source (CS) FET pair to enhance the second harmonic efficiently. Between 21 and 28 GHz, this doubler features a conversion gain of higher than 1.5 dB with an input power of 8 dBm. The maximum conversion gain is 1.9 dB at 26 GHz with an efficiency of up to 23.2% and a power-added efficiency (PAE) of 9.6 %. The maximum output 1-dB compression point (P 1dB) is 10.4 dBm and the saturation output power (P sat) is higher than 11.4 dBm at 24 GHz. The overall chip size is 1×1 mm 2. To the best of the author's knowledge, this work demonstrates the highest efficiency with high output power among all the fully integrated doublers covering the K-band without buffer amplifiers.

原文???core.languages.en_GB???
主出版物標題Asia-Pacific Microwave Conference Proceedings, APMC 2011
頁面1258-1261
頁數4
出版狀態已出版 - 2011
事件Asia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia
持續時間: 5 12月 20118 12月 2011

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

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???event.eventtypes.event.conference???Asia-Pacific Microwave Conference, APMC 2011
國家/地區Australia
城市Melbourne, VIC
期間5/12/118/12/11

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