A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis

Kuan Hsueh Lu; Jyun Jia Huang; Wei Cheng Chen; Hong Yeh Chang; Yu Chi Wang

doi:10.1109/RFIT.2018.8524108

A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis

Kuan Hsueh Lu, Jyun Jia Huang, Wei Cheng Chen, Hong Yeh Chang, Yu Chi Wang

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

In this paper, we present a K-band frequency doubler using 0.15-μ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is 0.9 × 0.8m^2. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.

原文	???core.languages.en_GB???
主出版物標題	2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781538659717
DOIs	https://doi.org/10.1109/RFIT.2018.8524108
出版狀態	已出版 - 5 11月 2018
事件	2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 - Melbourne, Australia 持續時間: 15 8月 2018 → 17 8月 2018

出版系列

名字	2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018
國家/地區	Australia
城市	Melbourne
期間	15/08/18 → 17/08/18

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10.1109/RFIT.2018.8524108

應用於小型無人飛行載具之W頻段雷達前端積體電路研製(2/3)
Chang, H.-Y. (PI)
1/08/18 → 31/07/19
研究計畫: Research
微波及毫米波量測儀器系統之高性能前端積體電路開發(3/3)
Chang, H.-Y. (PI)
1/08/18 → 31/10/19
研究計畫: Research

引用此

Lu, K. H., Huang, J. J., Chen, W. C., Chang, H. Y., & Wang, Y. C. (2018). A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. 於 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 文章 8524108 (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2018.8524108

Lu, Kuan Hsueh ; Huang, Jyun Jia ; Chen, Wei Cheng 等. / A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018).

@inproceedings{4f7249612bd746cabbbfb78c0336e693,

title = "A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis",

abstract = "In this paper, we present a K-band frequency doubler using 0.15-μ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is 0.9 × 0.8m^2. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.",

keywords = "E-mode, GaAs, Gm-boosted technique, MMIC, frequency doubler, microwave and MMW, pHEMT",

author = "Lu, {Kuan Hsueh} and Huang, {Jyun Jia} and Chen, {Wei Cheng} and Chang, {Hong Yeh} and Wang, {Yu Chi}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018 ; Conference date: 15-08-2018 Through 17-08-2018",

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Lu, KH, Huang, JJ, Chen, WC, Chang, HY & Wang, YC 2018, A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. 於 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018., 8524108, 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018, Melbourne, Australia, 15/08/18. https://doi.org/10.1109/RFIT.2018.8524108

A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. / Lu, Kuan Hsueh; Huang, Jyun Jia; Chen, Wei Cheng 等.
2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8524108 (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis

AU - Lu, Kuan Hsueh

AU - Huang, Jyun Jia

AU - Chen, Wei Cheng

AU - Chang, Hong Yeh

AU - Wang, Yu Chi

PY - 2018/11/5

Y1 - 2018/11/5

N2 - In this paper, we present a K-band frequency doubler using 0.15-μ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is 0.9 × 0.8m^2. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.

AB - In this paper, we present a K-band frequency doubler using 0.15-μ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is 0.9 × 0.8m^2. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.

KW - E-mode

KW - GaAs

KW - Gm-boosted technique

KW - MMIC

KW - frequency doubler

KW - microwave and MMW

KW - pHEMT

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T3 - 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018

BT - 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018

Y2 - 15 August 2018 through 17 August 2018

ER -

Lu KH, Huang JJ, Chen WC, Chang HY, Wang YC. A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis. 於 2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8524108. (2018 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2018). doi: 10.1109/RFIT.2018.8524108

A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis

摘要

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應用於小型無人飛行載具之W頻段雷達前端積體電路研製(2/3)

微波及毫米波量測儀器系統之高性能前端積體電路開發(3/3)

引用此