@inproceedings{7e0327ac3e12442398291483a49d9010,
title = "A high performance V-band low noise amplifier using thin-film microstrip (TFMS) lines in 0.13 μm CMOS technology",
abstract = "A 60 GHz low noise amplifier (LNA) in standard 0.13 m CMOS process is demonstrated. A shunted inductor is applied to resonate out the parasitic capacitor at the drain node of the first common source stage which effectively reduce the NF and enhance gain. This thin-film microstrip LNA achieves a measured power gain of 15.8 dB, a noise figure of 5.71 dB, an output 1-dB compression point (OP1dB) of 1.13 dBm, and an input third-order inter-modulation point (IIP3) of 4.8 dBm at 60 GHz. The chip area with pads is 0.42 mm 2 and the power consumption is 43.3 mW.",
keywords = "CMOS, Low noise amplifier (LNA), microstrip (TFMS), millimeter-wave, thin-film, V-band",
author = "Chiou, {Hwann Kaeo} and Lee, {Kuan Zung} and Wu, {Shang Ju}",
year = "2010",
language = "???core.languages.en_GB???",
isbn = "9784902339222",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "1513--1516",
booktitle = "2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010",
note = "2010 Asia-Pacific Microwave Conference, APMC 2010 ; Conference date: 07-12-2010 Through 10-12-2010",
}