@article{7fbb75f3c74d4ef5baa578e09dfc30c0,
title = "A high efficiency broadband class-E power amplifier using a reactance compensation technique",
abstract = "This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 μm enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P1 dB); of higher than 27 dBm.",
keywords = "Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT), high efficiency, power amplifier (PA), reactance compensation",
author = "Lin, {Chi Hsien} and Chang, {Hong Yeh}",
note = "Funding Information: Manuscript received February 01, 2010; revised April 19, 2010; accepted June 21, 2010. Date of publication August 09, 2010; date of current version September 03, 2010. This work was supported in part by the National Science Council of Taiwan under Grants NSC 96-2221-E-008-117-MY3 and NSC99–2221–E-008–097–MY3, by the Industrial Technology Research Institute, Hsinchu, Taiwan, Grant ITRI 52-99S5-4, and by WIN Semiconductors Corporation, and the Chip Implementation Center (CIC), Taiwan.",
year = "2010",
month = sep,
doi = "10.1109/LMWC.2010.2056675",
language = "???core.languages.en_GB???",
volume = "20",
pages = "507--509",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
number = "9",
}