A high efficiency broadband class-E power amplifier using a reactance compensation technique

Chi Hsien Lin, Hong Yeh Chang

研究成果: 雜誌貢獻期刊論文同行評審

21 引文 斯高帕斯(Scopus)

摘要

This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 μm enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P1 dB); of higher than 27 dBm.

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文章編號5545480
頁(從 - 到)507-509
頁數3
期刊IEEE Microwave and Wireless Components Letters
20
發行號9
DOIs
出版狀態已出版 - 9月 2010

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