A fully integrated power amplifier with switched output network in GaAs HBT-HEMT process

Chih Chun Shen, Hong Yeh Chang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

This paper describes a fully integrated power amplifier (PA) with switched output network in 2 μm / 0.5 μm GaAs HBT-HEMT (BiFET) process. The proposed PA is designed using both HBT and PHEMT. The HBT is adopted for the PA and the bias circuit, while the PHEMT is adopted for the switched output network. By using the proposed method, the switchable PA demonstrates a power added efficiency (PAE) improvement of more than 20% at the low-power region. With dynamic current biasing (DCB) technique, the proposed PA can be operated both in high- and low-power mode with good PAE. At 2 GHz, the PA features an output P 1dB of 21.6 dBm, a peak PAE of 36.5% for the high-power mode, and a peak PAE of 33.8% with a output P 1dB of 7.9 dBm for the low-power mode.

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主出版物標題European Microwave Week 2011
主出版物子標題"Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
頁面208-211
頁數4
出版狀態已出版 - 2011
事件14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester, United Kingdom
持續時間: 10 10月 201111 10月 2011

出版系列

名字European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

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???event.eventtypes.event.conference???14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
國家/地區United Kingdom
城市Manchester
期間10/10/1111/10/11

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