A full X-band power amplifier with an integrated guanella-type transformer and a predistortion linearizer in 0.18-μM CMOS

A full X-band push-pull power amplifier (PA) with predistortion linearizer is developed in tsmc™ 0.18-μm CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella-type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X-band from 8 to 12 GHz, the saturated power and maximum power-added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1-dB compression point and power-added efficiency (PAE) at P_1dB are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back-off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm².