A full X-band power amplifier with an integrated guanella-type transformer and a predistortion linearizer in 0.18-μM CMOS

Hua Yen Chung, Chin Wei Kuo, Hwann Kaeo Chiou

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

A full X-band push-pull power amplifier (PA) with predistortion linearizer is developed in tsmc™ 0.18-μm CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella-type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X-band from 8 to 12 GHz, the saturated power and maximum power-added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1-dB compression point and power-added efficiency (PAE) at P1dB are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back-off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm2.

原文???core.languages.en_GB???
頁(從 - 到)2229-2232
頁數4
期刊Microwave and Optical Technology Letters
55
發行號9
DOIs
出版狀態已出版 - 9月 2013

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